发明名称 |
MEMORY CELLS HAVING A ROW-BASED READ AND/OR WRITE SUPPORT CIRCUITRY |
摘要 |
A method of controlling a plurality of memory cells in a row. The method includes controlling a switching element using at least one write word line signal to raise a voltage of a node connected to the plurality of memory cells in the row when the plurality of memory cells in the row operate in a first mode. The method further includes controlling at least one transistor using the at least one write word line signal to connect the plurality of memory cells in the row to a reference voltage when the plurality of memory cells in the row operate in a second mode. |
申请公布号 |
US2012243347(A1) |
申请公布日期 |
2012.09.27 |
申请号 |
US201213489055 |
申请日期 |
2012.06.05 |
申请人 |
SAMPIGETHAYA SHREEKANTH;UPPUTURI BHARATH;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
SAMPIGETHAYA SHREEKANTH;UPPUTURI BHARATH |
分类号 |
G11C7/00 |
主分类号 |
G11C7/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|