SOI SUBSTRATE AND MANUFACTURING METHOD FOR THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method for an SOI substrate which prevents a semiconductor film such as a single-crystal silicon film from separating off from a support substrate, and improve the yield and reduce the production cost in manufacture of the SOI substrate by employing this method.

SOLUTION: A manufacturing method for an SOI substrate includes: forming an insulation film on a semiconductor substrate; irradiating the semiconductor substrate with accelerated ions to form an embrittled region in the semiconductor substrate; attaching the semiconductor substrate and a support substrate to each other with the insulation film interposed therebetween; separating the semiconductor substrate at the embrittled region to form a semiconductor film on the support substrate with the insulation film interposed therebetween; forming a mask on the semiconductor film; and etching a part of the semiconductor film and a part of the insulation film to form the semiconductor film and the insulation film so that a peripheral part of the semiconductor film is located inside a peripheral part of the insulation film.

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