| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve processing uniformity of a plasma processing system to process a substrate. <P>SOLUTION: The plasma processing system comprises a process chamber within which plasma is both ignited and sustained for processing. The plasma processing system further comprises an electrode 152 disposed at the lower end of the process chamber. The electrode 152 is configured for generating an electric field inside the process chamber. The plasma processing system also includes a component for controlling impedance between the electrode and the plasma. The impedance is arranged to affect the electric field to improve processing uniformity across the surface of the substrate. <P>COPYRIGHT: (C)2012,JPO&INPIT |
