| 发明名称 |
SEMICONDUCTOR DEVICE MANUFACTURING METHOD |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device where contact with a source region and a drain region of a thin film transistor surely is ensured. <P>SOLUTION: A semiconductor device comprises: a first interlayer insulating film formed on an insulating film and a gate electrode on a semiconductor layer; a second interlayer insulating film formed on the first interlayer insulating film; and contact holes formed in the second interlayer insulating film, the first interlayer insulating film and the insulating film. Film thickness of the first insulating layer is formed to be 1/3 or less of total film thickness of laminated insulating films. <P>COPYRIGHT: (C)2012,JPO&INPIT |
| 申请公布号 |
JP2012186498(A) |
申请公布日期 |
2012.09.27 |
| 申请号 |
JP20120117609 |
申请日期 |
2012.05.23 |
| 申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
ZHANG HONGYONG |
| 分类号 |
H01L21/84;H01L29/786;H01L21/28;H01L21/311;H01L21/336;H01L21/768;H01L29/78 |
主分类号 |
H01L21/84 |
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