COMPOSITION AND METHOD FOR REMOVING ION-IMPLANTED PHOTORESIST
摘要
<p>COMPOSITION AND METHOD FOR REMOVING ION-IMPLANTED PHOTORESISTA method and mineral acid-containing compositions for removing bulk and/or hardened photoresist material from microelectronic devices have been developed. The mineral acid-containing composition includes at least one mineral acid, at least one sulfur-containing oxidizing agent, and optionally at least one metal ion-containing catalyst. The mineral acid-containing compositions effectively remove the hardened photoresist material while not damaging the underlying silicon-containing layer(s).Fig. IA</p>
