| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a treatment method which can remove fine particles and metal impurities on the surface of a semiconductor substrate without causing corrosion or oxidation of the semiconductor substrate and a metal wiring, and can simultaneously remove carbon defect on the surface of the substrate without removing a metal corrosion inhibitor-Cu coating film. <P>SOLUTION: The treatment method includes treating the semiconductor substrate having been treated with benzotriazol or slurry containing a derivative thereof with a cleaning agent containing (I) 0.05-50 wt.% of an organic acid having at least one carboxyl group, (II) 0.01-30 wt.% of at least one complexing agent selected from the group consisting of polyphosphonic acids, aryl phosphonic acids and ammonium salt or alkali metal salt thereof, and (III) 0.05-50 wt.% of at least one organic solvent selected from the group consisting of saturated aliphatic monohydric alcohol having 1-5 carbon atoms, alkoxy alcohol having 3-10 carbon atoms, glycol having 2-16 carbon atoms, glycol ether having 3-20 carbon atoms, ketone having 3-10 carbon atoms and nitrile having 2-4 carbon atoms. <P>COPYRIGHT: (C)2012,JPO&INPIT |
