发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
A semiconductor device having excellent electric characteristics and a method for manufacturing the semiconductor device are provided. A method for manufacturing a semiconductor device includes the steps of: forming a gate electrode; forming a gate insulating film to cover the gate electrode; forming an oxide semiconductor film over the gate insulating film; forming a hydrogen permeable film over the oxide semiconductor film; forming a hydrogen capture film over the hydrogen permeable film; performing heat treatment to release hydrogen from the oxide semiconductor film; forming a source electrode and a drain electrode to be in contact with a part of the oxide semiconductor film; and removing an exposed portion of the hydrogen capture film to form a channel protective film formed of the hydrogen permeable film. A semiconductor device manufactured by the above method is also provided. |
申请公布号 |
US2012241738(A1) |
申请公布日期 |
2012.09.27 |
申请号 |
US201213422251 |
申请日期 |
2012.03.16 |
申请人 |
IMOTO YUKI;MARUYAMA TETSUNORI;ENDO YUTA;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
IMOTO YUKI;MARUYAMA TETSUNORI;ENDO YUTA |
分类号 |
H01L29/786;H01L21/36 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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