RESISTANCE VARIABLE MEMORY AND FABRICATING METHOD THEREOF

摘要

A resistance variable memory and a fabricating method thereof are provided. The memory includes a substrate(24), a plane upper electrode(21), a pinnacle-shape lower electrode(23) with the middle part protruding upward, and a resistance variable material(22) between the lower electrode(23) and the upper electrode(21). The power consumption can be lowered by using the pinnacle-shape lower electrode(23). The fabricating method includes the following steps: a pinnacle-shape structure is formed on the surface of the substrate(24) by an etching process, the lower electrode(23) is growing on the structure to form the pinnacle-shape lower electrode(23), and then the resistance variable material(22) and the upper electrode(21) are deposited. The whole fabricating process is simple and a high-integrated device can be achieved.