| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor switch circuit that can prevent isolation degradation between input/output terminals. <P>SOLUTION: A first unit switch 101 is provided between a first input/output terminal 51 and a second input/output terminal 52, and a second unit switch 102 is provided between the first input/output terminal 51 and a third input/output terminal 53. A first shunt switch 103 and a first DC cut capacitor 49 are connected in series between the second input/output terminal 52 and the ground, and a second shunt switch 104 and a second DC cut capacitor 50 are connected in series between the third input/output terminal 53 and the ground. Additional capacitors 41 to 44 are connected between gates and drains of first to fourth FETs 1 to 4 constituting the first and second unit switches 101 and 102, respectively. A first inter-terminal communication resistor 31 is connected in parallel to the first unit switch 101, and a second inter-terminal communication resistor 32 is connected in parallel to the second unit switch 102. <P>COPYRIGHT: (C)2012,JPO&INPIT |
