| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device provided with a transistor which can supply sufficient current. <P>SOLUTION: A semiconductor device of an embodiment comprises: a semiconductor substrate; a semiconductor region provided on the semiconductor substrate, with a top face and side faces forming a saddle shape, and having salients on both ends in a first direction of a region on the top face including a saddle point, respectively; a gate insulation film provided on the top face of the semiconductor region except top faces of the salients, on the side faces along the first direction and on side faces along a second direction perpendicular to the first direction of the salients on the side of the region on the top face including the saddle point; a gate electrode provided on the gate insulation film and having a body part provided immediately above the region on the top face including the saddle point, and leg parts linked to the body part and covering the side faces along the first direction of the semiconductor region, each leg part being formed such that a length in the first direction is longer than a length of the body part in the first direction; and first and second impurity regions provided on the semiconductor substrate on both sides of the gate electrode. <P>COPYRIGHT: (C)2012,JPO&INPIT |
