发明名称 |
HIGH-VOLTAGE MEMS APPARATUS AND METHOD |
摘要 |
A high-voltage MEMS system compatible with low-voltage semiconductor process technology is disclosed. The system comprises a MEMS device coupled to a high-voltage bias generator employing an extended-voltage isolation residing in a semiconductor technology substrate. The system avoids the use of high-voltage transistors so that special high-voltage processing steps are not required of the semiconductor technology, thereby reducing process cost and complexity. MEMS testing capability is addressed with a self-test circuit allowing modulation of the bias voltage and current so that a need for external high-voltage connections and associated electro-static discharge protection circuitry are also avoided.
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申请公布号 |
US2012242400(A1) |
申请公布日期 |
2012.09.27 |
申请号 |
US201113071374 |
申请日期 |
2011.03.24 |
申请人 |
SHAEFFER DEREK;CAGDASER BARIS;SEEGER JOSEPH;INVENSENSE, INC. |
发明人 |
SHAEFFER DEREK;CAGDASER BARIS;SEEGER JOSEPH |
分类号 |
G05F1/10;H01L29/06 |
主分类号 |
G05F1/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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