| 摘要 |
The present invention relates to a method for the electrical bonding of connection areas of two substrates (6, 7), more particularly of a chip (6) and of a carrier substrate (7), two wafers or a plurality of superposed chips and a substrate. The method according to the invention is performed in two successive phases, in a first phase, the chip (6) being positioned with its connection areas against connection areas of the substrate (7) and rearward application of laser energy (5) to the chip (6), and, in a subsequent second phase, in a housing (3), a flux medium (for example a nitrogen-formic acid mixture) being applied and at the same time a reflow being performed by means of rearward application of laser energy (5) to the chip (6), and a process of purging the housing interior subsequently being performed. The invention also concerns a device for performing the second phase of the method according to the invention. The device according to the invention for performing the second phase of the method comprises a support table (1) and a housing (3), which together with a top of the support table (1) forms a housing interior, in which the component arrangement is positioned, and a laser light source (5), which is oriented such that the laser radiation impinges on the first substrate (6) on the rear side. |
