| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide: a vacuum integrated substrate processing apparatus for solving a problem of air exposure after release etching, for example, for fabricating a MEMS device; and a film deposition method. <P>SOLUTION: A vacuum integrated substrate processing apparatus includes: a polygonal conveyance chamber 11; and a release etching apparatus 12, an ALD apparatus 13, a load lock chamber 18 and the like, which are connected to each side of the polygon, respectively. Release etching and ALD deposition are performed in vacuum integrated process. Thus, electrical characteristics and optical characteristics in a device finally obtained is improved and the production yield of a display can be also improved. <P>COPYRIGHT: (C)2012,JPO&INPIT |
