| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a wafer having a high-quality crystal formed on a substrate of silicon or the like, and to provide a crystal growth method and a semiconductor device. <P>SOLUTION: In an embodiment, a wafer including a substrate, a base layer, an underlayer, an intermediate layer and a functional part is provided. The base layer is provided on the main surface of the substrate, and contains a silicon compound. The underlayer is provided on the base layer, and contains GaN. The intermediate layer is provided on the underlayer, and contains a layer containing AIN. The functional part is provided on the intermediate layer, and contains a nitride semiconductor. The concentration of silicon atoms in a first region on the base layer side of the underlayer is higher than the concentration of silicon atoms in a second region on the intermediate layer side of the underlayer. The underlayer has a plurality of voids provided in the first region. <P>COPYRIGHT: (C)2012,JPO&INPIT |
