| 摘要 |
A semiconductor storage device according to the present embodiment comprises a plurality of bit lines, a plurality of word lines, and a plurality of memory cells corresponding to intersections between the bit lines and the word lines, respectively, and including magnetic tunnel junction elements capable of storing data. A plurality of sense amplifiers respectively correspond to the bit lines and are configured to detect data stored in the memory cells via a bit line selected from among the corresponding bit lines. A plurality of read latch parts correspond to the sense amplifiers, respectively, and are configured to latch data detected by the corresponding sense amplifiers. A plurality of read global data buses are connected to the read latch parts, respectively, and are configured to consecutively transmit data latched by the read latch parts at a time of a data read operation.
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