发明名称 |
P-/METAL FLOATING GATE NON-VOLATILE STORAGE ELEMENT |
摘要 |
Non-volatile storage elements having a P−/metal floating gate are disclosed herein. The floating gate may have a P− region near the tunnel oxide, and may have a metal region near the control gate. A P− region near the tunnel oxide helps provide good data retention. A metal region near the control gate helps to achieve a good coupling ratio between the control gate and floating gate. Therefore, programming of non-volatile storage elements is efficient. Also, erasing the non-volatile storage elements may be efficient. In some embodiments, having a P− region near the tunnel oxide (as opposed to a strongly doped p-type semiconductor) may improve erase efficiency relative to P+. |
申请公布号 |
US2012243337(A1) |
申请公布日期 |
2012.09.27 |
申请号 |
US201113153964 |
申请日期 |
2011.06.06 |
申请人 |
LEE SANGHYUN;DUNGA MOHAN;HIGASHITANI MASAAKI;PHAM TUAN;KREUPL FRANZ |
发明人 |
LEE SANGHYUN;DUNGA MOHAN;HIGASHITANI MASAAKI;PHAM TUAN;KREUPL FRANZ |
分类号 |
G11C16/10;G11C16/04;H01L21/336;H01L29/788 |
主分类号 |
G11C16/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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