发明名称 |
CLEANING AGENT FOR SEMICONDUCTOR PROVIDED WITH METAL WIRING |
摘要 |
<p>A cleaning agent for a microelectronic device provided with metal wiring, which has an excellent ability to remove polishing particle residues derived from a polishing agent and an excellent ability to remove metallic residues on an insulating film, and has excellent anticorrosiveness to the metal wiring. The cleaning agent is used at a step subsequent to chemical mechanical polishing in a manufacturing process of a microelectronic device in which a metal wiring, e.g., copper or tungsten, is formed.</p> |
申请公布号 |
SG182789(A1) |
申请公布日期 |
2012.09.27 |
申请号 |
SG20120056230 |
申请日期 |
2011.01.28 |
申请人 |
ADVANCED TECHNOLOGY MATERIALS, INC. |
发明人 |
NAKANISHI, MUTSUMI;YOSHIMOCHI, HIROSHI;KOJI, YUKICHI |
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