发明名称 |
Driver circuit and semiconductor device |
摘要 |
The silicon nitride layer 910 formed by plasma CVD using a gas containing a hydrogen compound such as silane (SiH 4 ) and ammonia (NH 3 ) is provided on and in direct contact with the oxide semiconductor layer 905 used for the resistor 354, and the silicon nitride layer 910 is provided over the oxide semiconductor layer 906 used for the thin film transistor 355 with the silicon oxide layer 909 serving as a barrier layer interposed therebetween. Therefore, a higher concentration of hydrogen is introduced into the oxide semiconductor layer 905 than into the oxide semiconductor layer 906. As a result, the resistance of the oxide semiconductor layer 905 used for the resistor 354 is made lower than that of the oxide semiconductor layer 906 used for the thin film transistor 355. |
申请公布号 |
EP2202802(B1) |
申请公布日期 |
2012.09.26 |
申请号 |
EP20090178444 |
申请日期 |
2009.12.09 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
KOYAMA, JUN;SAKATA, JUNICHIRO;MARUYAMA, TETSUNORI;IMOTO, YUKI;ASANO, YUJI;KOEZUKA, JUNICHI |
分类号 |
H01L27/06;H01L21/77;H01L27/12;H01L29/786 |
主分类号 |
H01L27/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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