| 摘要 |
<p>PURPOSE: A semiconductor device and a manufacturing method thereof are provided to quicken an elimination operation by rapidly boosting channel dislocation of a memory cell using GIDL(Gate Induced Drain Leakage) current. CONSTITUTION: A semiconductor device comprises a substrate, a first lamination body, a first channel body(20), a second lamination body, a gate insulating layer, and a second channel body(51). A stepped pulley part is formed between the side of a selection gate and a second insulating layer. The thickness of the second channel body of a portion coating the stepped pulley part is thicker than the thickness of the second channel body of a portion formed on the second insulating layer. The second channel body is installed inside the gate insulating layer and is connected to the first channel body.</p> |
