发明名称 METHOD FOR PURIFICATION OF TRICHLOROSILANE
摘要 PURPOSE: A method for refining trichlorosilane is provided to efficiently obtain trichlorosilane of high purity required for the polysilicon of a semiconductor without a pipe clogging phenomenon. CONSTITUTION: A method for refining trichlorosilane includes the following: crude trichlorosilane successively passes through at least two distilling columns(C1 to C4); at least one bed containing moisture eliminated silica gel is installed between the distilling columns; and liquid trichlorosilane stream passes through the silica gel bed. Each operational pressure of the distilling columns is in a range between 1 and 5 kg/cm^2. Each operation temperature of the distilling columns is in a range between 50 and 150 deg C.
申请公布号 KR20120106290(A) 申请公布日期 2012.09.26
申请号 KR20110024316 申请日期 2011.03.18
申请人 KCC CORPORATION 发明人 KIM, HONG KYUM;PARK, SU WHAN;KO, TAE HO;JEON, MUN KYU;OH, WON SEOK
分类号 C01B33/107;B01D3/00;B01D53/02 主分类号 C01B33/107
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