发明名称 |
METHOD FOR PURIFICATION OF TRICHLOROSILANE |
摘要 |
PURPOSE: A method for refining trichlorosilane is provided to efficiently obtain trichlorosilane of high purity required for the polysilicon of a semiconductor without a pipe clogging phenomenon. CONSTITUTION: A method for refining trichlorosilane includes the following: crude trichlorosilane successively passes through at least two distilling columns(C1 to C4); at least one bed containing moisture eliminated silica gel is installed between the distilling columns; and liquid trichlorosilane stream passes through the silica gel bed. Each operational pressure of the distilling columns is in a range between 1 and 5 kg/cm^2. Each operation temperature of the distilling columns is in a range between 50 and 150 deg C. |
申请公布号 |
KR20120106290(A) |
申请公布日期 |
2012.09.26 |
申请号 |
KR20110024316 |
申请日期 |
2011.03.18 |
申请人 |
KCC CORPORATION |
发明人 |
KIM, HONG KYUM;PARK, SU WHAN;KO, TAE HO;JEON, MUN KYU;OH, WON SEOK |
分类号 |
C01B33/107;B01D3/00;B01D53/02 |
主分类号 |
C01B33/107 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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