| 摘要 |
PURPOSE: A plasma etching apparatus and a plasma etching method are provided to uniformly etch a surface by controlling a heating device and a cooling device based on a temperature of a ring member. CONSTITUTION: A focus ring(3) surrounds a substrate and controls the state of plasma. A temperature detecting unit detects the temperature of the focus ring. A recipe memory unit(65) memorizes a process recipe with a process condition for etching the substrate and a preset temperature of the focus ring. An executing unit reads the process recipe from the recipe memory unit and outputs a control signal for controlling a heating device and a cooling device based on a temperature value detected by the temperature detecting unit and a preset temperature of the focus ring. [Reference numerals] (29) Electrostatic chuck controller; (31) He; (32) Pressure control unit; (37) LED; (38) Pressure controller; (39) Laser output controller; (6) Control unit; (61) Interference thermometer; (63) Thermometer controller; (64) Process recipe; (66) Program; (67) CPU; (68) Bus; (81) Supply control unit; (85) Recipe memory unit; (AA) Step; (BB) Film sort |
