| 摘要 |
<p>PURPOSE: A semiconductor device and a manufacturing method thereof are provided to improve ON-state current and mobility of a nano-wire transistor by magnifying crystal grain of a channel region. CONSTITUTION: A polycrystalline semiconductor layer comprises a first region, a second region, and a third region. The width of the second region and the third region is wider than the width of the first region. One side either the second region or the third region contacts the first region. A gate insulating layer is formed on the side of the first region of the polycrystalline semiconductor layer. A gate electrode(6) is formed on the gate insulating layer. A gate sidewall is formed on the side of the second region and the third region. Impurity content per unit volume at the first region is more than impurity content per unit volume at the second region and the third region.</p> |
