发明名称 |
DEVICE-MOUNTED SUBSTRATE, INFRARED LIGHT SENSOR AND THROUGH ELECTRODE FORMING METHOD |
摘要 |
<p>PURPOSE: A substrate, an infrared sensor, and a method for forming a through electrode are provided to uniformly form a layer with high density and insulation by forming an insulation layer in a via hole and one surface of a base substrate. CONSTITUTION: A via hole(26) is formed on a base substrate(12). A first insulation layer(28) includes a thermally oxidized layer formed on one surface of the base substrate and in the via hole. A conductor is surrounded with the first insulation layer and is installed in the via hole. A wiring layer is formed on one surface of the base substrate by interposing the first insulation layer. The thickness of the first insulation layer on one surface of the base substrate is equal to the thickness of the first insulation layer in the via hole. [Reference numerals] (18) Device circuit; (26) Via hole; (28) First insulation layer; (30) Buried conductor; (34) Second insulation layer; (36) Temporary filler; (AA) Process 1; (BB) Process 2; (CC) Process 3; (DD) Process 4; (EE) Process 5; (FF) Process 6; (GG) Process 7; (HH) Process 8</p> |
申请公布号 |
KR20120106643(A) |
申请公布日期 |
2012.09.26 |
申请号 |
KR20120027075 |
申请日期 |
2012.03.16 |
申请人 |
SEIKO EPSON CORPORATION |
发明人 |
YODA TSUYOSHI;HASHIMOTO NOBUAKI |
分类号 |
H01L21/28;G01J1/02;H01L21/768 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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