| 摘要 |
<p>An illuminating device according to the present invention includes at least a first nitride-based semiconductor light-emitting element and a second nitride-based semiconductor light-emitting element, in which: the first nitride-based semiconductor light-emitting element and the second nitride-based semiconductor light-emitting element each include a semiconductor chip; the semiconductor chip includes a nitride-based semiconductor multilayer structure 45 formed from an Al x In y Ga z N (x+y+z=1, x‰¥0, y‰¥0, z>0) semiconductor, and the nitride-based semiconductor multilayer structure 20 includes an active layer region 24 formed from a nitride semiconductor layer; the active layer region is at an angle of 1° or more with an m plane, and an angle formed by a normal line of a principal surface in the active layer region and a normal line of the m plane is 1° or more and 5° or less; the first nitride-based semiconductor light-emitting element and the second nitride-based semiconductor light-emitting element each emit polarized light from the active layer region 24 ; and, when the polarized light emitted from the first nitride-based semiconductor light-emitting element and the polarized light emitted from the second nitride-based semiconductor light-emitting element have wavelengths » 1 and » 2 , respectively, and thicknesses of the semiconductor chips 45 of the first nitride-based semiconductor light-emitting element and the second nitride-based semiconductor light-emitting element are given as d1 and d2 , respectively, the following relations are satisfied: » 1 <» 2 ; and d 1 <d 2 .</p> |
