发明名称 METHODS FOR ETCHING THE EDGE OF A SILICON WAFER, SILICON WAFER, ETCHING APPARATUS
摘要 <p>The present disclosure generally relates to the manufacture of silicon wafers, and more particularly to edge etching apparatus and methods for etching the edge of a silicon wafer.</p>
申请公布号 EP2260507(B1) 申请公布日期 2012.09.26
申请号 EP20090727521 申请日期 2009.03.31
申请人 MEMC ELECTRONIC MATERIALS, INC. 发明人 ERK, HENRY, F.;ALBRECHT, PETER, D.;HOLLANDER, EUGENE, R.;DOANE, THOMAS, E.;SCHMIDT, JUDY, A.;VANDAMME, ROLAND, R.;ZHANG, GUOQIANG (DAVID)
分类号 H01L21/302;H01L21/304;H01L21/306;H01L21/67;H01L21/673 主分类号 H01L21/302
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