发明名称 |
Semiconductor light emitting device and method of fabricating the same |
摘要 |
Provided are a semiconductor light emitting device and a method of fabricating the same. The semiconductor light emitting device comprises a multireflection layer comprising at least one of reflection layers of different refractive indices, a first conductive semiconductor layer on the multireflection layers, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer. |
申请公布号 |
US8274093(B2) |
申请公布日期 |
2012.09.25 |
申请号 |
US20080676844 |
申请日期 |
2008.09.05 |
申请人 |
PARK HYUNG JO;KANG DAE SUNG;SON HYO KUN;LG INNOTEK CO., LTD. |
发明人 |
PARK HYUNG JO;KANG DAE SUNG;SON HYO KUN |
分类号 |
H01L33/00;H01L21/00;H01L33/40 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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