| 摘要 |
A semiconductor memory device capable of reducing off-current in a standby mode is provided. The semiconductor memory device includes an enable signal generating unit configured to receive a plurality of address decoding signals and generate a first enable signal to select a first cell block and a second enable signal to select a second cell block, and an internal voltage generating unit for generating an internal voltage by controlling a supply of a first voltage in accordance with the first or second enable signals. |
