| 摘要 |
A nonvolatile semiconductor memory device is provided, which includes an input buffer provided with a first inverter that can electrically adjust circuit threshold values, a circuit: threshold value monitor provided with a second inverter having the same circuit configuration as the first inverter to detect the circuit threshold values of the first inverter when the input and output of the second inverter are short-circuited, respectively, a memory storing parameter values that correspond to the circuit threshold values detected by the circuit threshold value monitor, and a data-reader circuit reading the parameter values given to the first inverter from the memory. |
