METHOD FOR MANUFACTURING EPITAXIAL STRUCTURE OF SOLAR ELEMENT

摘要

A method for manufacturing s of a solar element based on GalnP / GaAs with two p-n barriers from gas phase includes use as elements of third and fifth groups of trimethyl gallium (TMGa), (TMA1), (AH3) and (PH3); as donor and acceptor additions – silane (SiH4) and (DEZn). Formation of solid solution pAlxGa1-xAs alloyed by zinc with growing width of in the direction of a light flow is realized by supplying to a reactor and fix consumption of .