PATTERNING PROCESS AND COMPOSITION FOR FORMING SILICON-CONTAINING FILM USABLE THEREFOR

摘要

PURPOSE: A pattern forming method and a composition for forming a silicon-containing film using the same are provided to suppress the deformation of photo-resist patterns during a dry etching process. CONSTITUTION: A pattern forming method includes the following: a silicon-containing film(20) is formed using a composition for forming a silicon-containing film; a photo-resist film(30) is formed using a resist composition without silicon on the silicon-containing film; the photo-resist film is exposed after heating by high energy beam; the non-exposed part of the photo-resist film is dissolved using the developer of an organic solvent to obtain negative patterns(30a). The composition for forming the silicon-containing film contains at least silicon-containing compound and organic solvent. [Reference numerals] (A) Coating photo-resist; (B) Exposing photo-resist; (C) Developing organic solvent