发明名称 |
Super lattice/quantum well nanowires |
摘要 |
Segmented semiconductor nanowires are manufactured by removal of material from a layered structure of two or more semiconductor materials in the absence of a template. The removal takes place at some locations on the surface of the layered structure and continues preferentially along the direction of a crystallographic axis, such that nanowires with a segmented structure remain at locations where little or no removal occurs. The interface between different segments can be perpendicular to or at angle with the longitudinal direction of the nanowire. |
申请公布号 |
US8273591(B2) |
申请公布日期 |
2012.09.25 |
申请号 |
US20080054886 |
申请日期 |
2008.03.25 |
申请人 |
HOVEL HAROLD J.;HUANG QIANG;SHAO XIAOYAN;VICHICONTI JAMES;WALKER GEORGE F.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
HOVEL HAROLD J.;HUANG QIANG;SHAO XIAOYAN;VICHICONTI JAMES;WALKER GEORGE F. |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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