发明名称 Nonvolatile memory device using semiconductor nanocrystals and method forming same
摘要 A method of making a nanoparticle array that includes replicating a dimension of a self-assembled film into a dielectric film, to form a porous dielectric film, conformally depositing a material over said porous dielectric film, and anisotropically and selectively etching said deposited material.
申请公布号 US8273665(B2) 申请公布日期 2012.09.25
申请号 US20090545010 申请日期 2009.08.20
申请人 BLACK CHARLES T.;GUARINI KATHRYN WILDER;INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 BLACK CHARLES T.;GUARINI KATHRYN WILDER
分类号 H01L21/311;H01L21/28;H01L21/8247;H01L29/423;H01L29/788;H01L29/792 主分类号 H01L21/311
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