发明名称 |
Nonvolatile memory device using semiconductor nanocrystals and method forming same |
摘要 |
A method of making a nanoparticle array that includes replicating a dimension of a self-assembled film into a dielectric film, to form a porous dielectric film, conformally depositing a material over said porous dielectric film, and anisotropically and selectively etching said deposited material.
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申请公布号 |
US8273665(B2) |
申请公布日期 |
2012.09.25 |
申请号 |
US20090545010 |
申请日期 |
2009.08.20 |
申请人 |
BLACK CHARLES T.;GUARINI KATHRYN WILDER;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BLACK CHARLES T.;GUARINI KATHRYN WILDER |
分类号 |
H01L21/311;H01L21/28;H01L21/8247;H01L29/423;H01L29/788;H01L29/792 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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