发明名称 |
Method for manufacturing a semiconductor apparatus having a through-hole interconnection |
摘要 |
A method for manufacturing a semiconductor apparatus having a through-hole interconnection in a semiconductor substrate. An insulating layer is formed on the semiconductor substrate. A via hole is formed through the semiconductor substrate and the insulating layer. Another insulating layer is formed in the via hole, and a conductive layer of the through-hole interconnection is subsequently formed. The insulating layer formed in the via hole is formed such as to substantially planarize an inner surface of the via hole.
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申请公布号 |
US8273657(B2) |
申请公布日期 |
2012.09.25 |
申请号 |
US201113027614 |
申请日期 |
2011.02.15 |
申请人 |
HARADA YOSHIMICHI;SUZUKI MASAMI;NABE YOSHIHIRO;TAKAOKA YUJI;SUEMASU TATSUO;WADA HIDEYUKI;SARUTA MASANOBU;SONY CORPORATION;FUJIKURA LTD. |
发明人 |
HARADA YOSHIMICHI;SUZUKI MASAMI;NABE YOSHIHIRO;TAKAOKA YUJI;SUEMASU TATSUO;WADA HIDEYUKI;SARUTA MASANOBU |
分类号 |
H01L21/44 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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