发明名称 Method for manufacturing a semiconductor apparatus having a through-hole interconnection
摘要 A method for manufacturing a semiconductor apparatus having a through-hole interconnection in a semiconductor substrate. An insulating layer is formed on the semiconductor substrate. A via hole is formed through the semiconductor substrate and the insulating layer. Another insulating layer is formed in the via hole, and a conductive layer of the through-hole interconnection is subsequently formed. The insulating layer formed in the via hole is formed such as to substantially planarize an inner surface of the via hole.
申请公布号 US8273657(B2) 申请公布日期 2012.09.25
申请号 US201113027614 申请日期 2011.02.15
申请人 HARADA YOSHIMICHI;SUZUKI MASAMI;NABE YOSHIHIRO;TAKAOKA YUJI;SUEMASU TATSUO;WADA HIDEYUKI;SARUTA MASANOBU;SONY CORPORATION;FUJIKURA LTD. 发明人 HARADA YOSHIMICHI;SUZUKI MASAMI;NABE YOSHIHIRO;TAKAOKA YUJI;SUEMASU TATSUO;WADA HIDEYUKI;SARUTA MASANOBU
分类号 H01L21/44 主分类号 H01L21/44
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