发明名称 |
Structure for flash memory cells |
摘要 |
A semiconductor structure is provided. The semiconductor structure includes a first floating gate on the semiconductor substrate, the floating gate having a concave side surface; a first control gate on the first floating gate; a first spacer adjacent to the first control gate; a first word line adjacent a first side of the first floating gate with a first distance; and an erase gate adjacent a second side of the first floating gate with a second distance less than the first distance, the second side being opposite the first side. |
申请公布号 |
US8273625(B2) |
申请公布日期 |
2012.09.25 |
申请号 |
US20100757172 |
申请日期 |
2010.04.09 |
申请人 |
SHEN MING-HUEI;TSAO TSUN-KAI;LIU SHIH-CHANG;LO CHI-HSIN;TSAI CHIA-SHIUNG;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
SHEN MING-HUEI;TSAO TSUN-KAI;LIU SHIH-CHANG;LO CHI-HSIN;TSAI CHIA-SHIUNG |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|