| 摘要 |
A disclosed fine pattern forming method includes steps of: forming patterns made of a first photoresist film, arranged at a first pitch on a film; trimming the patterns made of the first photoresist film; depositing a protection film on the patterns made of the first photoresist film on the trimmed patterns made of the first photoresist film, the protection film being made of reaction products of an etching gas, thereby obtaining first patterns; forming other patterns made of a second photoresist film, arranged at a second pitch, on the protection film, the other patterns made of the second photoresist film being shifted by half of the first pitch from the corresponding patterns made of the first photoresist film; trimming the other patterns made of the second photoresist film into second patterns; and etching the film using the first patterns and the second patterns. |
