Detection circuit with improved anti-blooming circuit

摘要

The detection circuit comprises a photodiode connected to an input of a capacitive transimpedance amplifier. The circuit comprises an anti-blooming circuit connected between the input and an output of the capacitive transimpedance amplifier. The anti-blooming circuit comprises a field effect transistor connected between the input and output of the capacitive transimpedance amplifier. The transistor is of pMOS type when the input of the capacitive transimpedance amplifier is connected to a cathode of the photodiode. The transistor is of nMOS type when the input of the capacitive transimpedance amplifier is connected to an anode of the photodiode.