| 摘要 |
A trench MOSFET having shielded gate in parallel with trench Schottky rectifier is formed on a single chip to further increase the efficiency of the trench MOSFET having shielded electrode. As the size of present device is getting smaller and smaller, the trench Schottky rectifier of this invention is able to be shrink and, at the same time, to achieve lower forward voltage drop and lower reverse leakage current. |
