发明名称 Internal voltage generator and semiconductor memory device including the same
摘要 A semiconductor device including an internal voltage generator circuit that provides an internal voltage having a different level depending on the operation speed is provided. The semiconductor device includes an internal voltage generator circuit configured to receive operation speed information to generate an internal voltage having a different level depending on the operation speed; and an internal circuit operated using the internal voltage.
申请公布号 US8274856(B2) 申请公布日期 2012.09.25
申请号 US20080165057 申请日期 2008.06.30
申请人 BYEON SANG-JIN;HYNIX SEMICONDUCTOR INC. 发明人 BYEON SANG-JIN
分类号 G11C5/14 主分类号 G11C5/14
代理机构 代理人
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