Solid-state imaging device, method for driving the same, and imaging device

摘要

In a CMOS image sensor (10) including a pixel array unit (12) having pixels separately arranged in even-numbered pixel rows and odd-numbered pixel rows, a reading operation performed on odd pixels having a short accumulation time is performed in an exposure start portion of even pixels having a long accumulation time. By this, even when the even pixels are saturated and signal charges overflow from the even pixels, and therefore, part of the signal charges intrude into the odd pixels adjacent to the even pixels, an adverse effect of blooming due to the saturation of the even pixels to signals of the odd pixels is eliminated since the reading operation performed on the odd pixels has already been completed. The adverse effect due to the blooming to the low-sensitive signals is eliminated when a method for attaining a dynamic range by differentiating accumulation times between adjacent pixels is employed.