| 摘要 |
A method for fabricating a semiconductor apparatus including a buried gate removes factors deteriorating the operational reliability of the semiconductor device such as the electrical connection between a contact and a word line, and increases a processing margin when forming the contact disposed on a source/drain region. The method includes forming a recess in a semiconductor substrate, forming a gate in a lower portion of the recess, forming a first insulation layer over the gate, growing silicon over the first insulation layer in the recess, and depositing a second insulation layer over the semiconductor substrate and in the remaining portion of the recess. |
