Method of opening one-side contact in vertical transistor and method of fabricating the one-side junction region using the same,申请号KR20110013456-传众专利搜索

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发明名称	Method of opening one-side contact in vertical transistor and method of fabricating the one-side junction region using the same
摘要
申请公布号	KR101185994(B1)	申请公布日期	2012.09.25
申请号	KR20110013456	申请日期	2011.02.15
申请人		发明人
分类号	H01L21/336;H01L29/78	主分类号	H01L21/336
代理机构		代理人
主权项
地址

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