| 摘要 |
A NAND memory device includes strings of NAND memory cells, where each memory cell includes a charge trapping structure formed over a lightly-doped substrate region. A selected one of the NAND memory cells can be programmed by application of a relatively low program voltage in combination with a previously-applied set-up voltage, which is applied to the substrate for initiating inversion. The inversion in the substrate causes electrons to become hot in the channel regions, including the channel of the selected memory cell. As a result, the relatively lower program voltage can be used at the control gate of the selected memory cell for sufficiently energizing hot electrons to tunnel into the charge trapping structure of the selected memory cell.
|
