| 发明名称 |
Circuit Arrangement with a MOSFET and an IGBT |
| 摘要 |
A circuit includes at least one FET and at least one IGBT that have their load paths connected in parallel. A voltage limiting circuit is coupled to a gate terminal of the at least one IGBT.
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| 申请公布号 |
US2012235710(A1) |
申请公布日期 |
2012.09.20 |
| 申请号 |
US201113048471 |
申请日期 |
2011.03.15 |
| 申请人 |
ROESSLER WERNER;DEBOY GERALD;INFINEON TECHNOLOGIES AG |
发明人 |
ROESSLER WERNER;DEBOY GERALD |
| 分类号 |
H03L5/00 |
主分类号 |
H03L5/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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