发明名称 PROTECTION OF REACTIVE METAL SURFACES OF SEMICONDUCTOR DEVICES DURING SHIPPING BY PROVIDING AN ADDITIONAL PROTECTION LAYER
摘要 When forming complex metallization systems on the basis of copper, the very last metallization layer may receive contact regions on the basis of copper, the surface of which may be passivated on the basis of a dedicated protection layer, which may thus allow the patterning of the passivation layer stack prior to shipping the device to a remote manufacturing site. Hence, the protected contact surface may be efficiently re-exposed in the remote manufacturing site on the basis of an efficient non-masked wet chemical etch process.
申请公布号 US2012235285(A1) 申请公布日期 2012.09.20
申请号 US201213421154 申请日期 2012.03.15
申请人 LEHR MATTHIAS;HOHAGE JOERG;OTT ANDREAS;GLOBALFOUNDRIES INC. 发明人 LEHR MATTHIAS;HOHAGE JOERG;OTT ANDREAS
分类号 H01L23/58;H01L21/28 主分类号 H01L23/58
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