发明名称 |
INTEGRATED CIRCUIT INCLUDING A BIPOLAR TRANSISTOR AND METHODS OF MAKING THE SAME |
摘要 |
An integrated circuit includes a bipolar transistor disposed over a substrate. The bipolar transistor includes a base electrode disposed around at least one germanium-containing layer. An emitter electrode is disposed over the at least one germanium-containing layer. At least one isolation structure is disposed between the emitter electrode and the at least one germanium-containing layer. A top surface of the at least one isolation structure is disposed between and electrically isolating a top surface of the emitter electrode from a top surface of the at least one germanium-containing layer. |
申请公布号 |
US2012235280(A1) |
申请公布日期 |
2012.09.20 |
申请号 |
US201113047468 |
申请日期 |
2011.03.14 |
申请人 |
HUANG WEI-TUNG;KUO CHUN-TSUNG;LIU SHIH-CHANG;TU YEUR-LUEN;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
HUANG WEI-TUNG;KUO CHUN-TSUNG;LIU SHIH-CHANG;TU YEUR-LUEN |
分类号 |
H01L29/735;H01L21/331 |
主分类号 |
H01L29/735 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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