| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element capable of achieving high luminance, high efficiency, and high reliability. <P>SOLUTION: A semiconductor light-emitting element according to an embodiment has a lamination structure body and an electrode. The lamination structure body has: a first conductivity type first semiconductor layer consisting of a nitride-based semiconductor; a second conductivity type second semiconductor layer consisting of a nitride-based semiconductor; and a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer. The electrode has first, second, and third metal layers. The first metal layer is provided on an opposite side of the light-emitting layer side of the second semiconductor layer, and contains silver or a silver alloy. The second metal layer is provided on an opposite side of the second semiconductor layer side of the first metal layer, and contains at least any one element of gold, platinum, palladium, rhodium, iridium, ruthenium, and osmium. The third metal layer is provided on an opposite side of the first metal layer side of the second metal layer. A thickness of the third metal layer in a direction from the first semiconductor layer toward the second semiconductor layer is equal to or larger than a thickness of the second metal layer in the direction. <P>COPYRIGHT: (C)2012,JPO&INPIT |
