| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a high-yield and thin semiconductor device. <P>SOLUTION: First of all, a plurality of element regions 3 and a terminal electrode 5 contacting the element regions 3 are formed on a first principal surface S1 of a semiconductor wafer 10, and then, a second principal surface S2 opposed to the first principal surface S1 of the semiconductor wafer 10 is thinned until a desired thickness is obtained while remaining an outer peripheral part of the semiconductor wafer 10. A metal layer 6 is formed on the second principal surface S2 of the thinned semiconductor wafer 10, and then, an insulation coat 7 is formed on the metal layer 6. Finally, by dividing along a dicing line D.L. for each element region 3 of the semiconductor wafer 10, segmentalized individual semiconductor devices are obtained. <P>COPYRIGHT: (C)2012,JPO&INPIT |
