| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an apparatus for growing a single crystal efficiently which reduces time other than directly necessary time for growing the single crystal, when growing a nitride single crystal in a growth container. <P>SOLUTION: The apparatus for growing the nitride single crystal includes: a main part in which a preheating zone 3, a crystal growing zone 4, and cooling zone 5 are provided; a first pressure adjusting chamber 2A provided at an upstream side of the preheating zone 3; a first pressure-resistant gate valve 9A provided between the preheating zone and the first pressure adjusting chamber; a second pressure adjusting chamber 2B provided at a downstream side of the cooling zone 5; a second pressure-resistant gate valve 9B provided between the cooling zone and the second pressure adjusting chamber; a multi-zone heater for heating inside the main part; and a transfer mechanism for transferring the growth container from the first pressure adjusting chamber to the second pressure adjusting chamber through the main part. <P>COPYRIGHT: (C)2012,JPO&INPIT |
