发明名称 |
SEMICONDUCTOR STRUCTURE HAVING AN INTEGRATED DOUBLE-WALL CAPACITOR FOR EMBEDDED DYNAMIC RANDOM ACCESS MEMORY (EDRAM) AND METHOD TO FORM THE SAME |
摘要 |
Semiconductor structures having integrated double-wall capacitors for eDRAM and methods to form the same are described. For example, an embedded double-wall capacitor includes a trench disposed in a first dielectric layer disposed above a substrate. The trench has a bottom and sidewalls. A U-shaped metal plate is disposed at the bottom of the trench, spaced apart from the sidewalls. A second dielectric layer is disposed on and conformal with the sidewalls of the trench and the U-shaped metal plate. A top metal plate layer is disposed on and conformal with the second dielectric layer. |
申请公布号 |
US2012235274(A1) |
申请公布日期 |
2012.09.20 |
申请号 |
US201113047656 |
申请日期 |
2011.03.14 |
申请人 |
DOYLE BRIAN S.;KUO CHARLES C.;LINDERT NICK;SHAH UDAY;SURI SATYARTH;CHAU ROBERT S. |
发明人 |
DOYLE BRIAN S.;KUO CHARLES C.;LINDERT NICK;SHAH UDAY;SURI SATYARTH;CHAU ROBERT S. |
分类号 |
H01L29/94;H01L21/02 |
主分类号 |
H01L29/94 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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