发明名称 |
OXIDE SEMICONDUCTOR FILM, SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE |
摘要 |
A highly reliable semiconductor device is manufactured by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used. In a transistor using an oxide semiconductor film for an active layer, a microvoid is provided in a source region and a drain region adjacent to a channel region. By providing a microvoid in the source region and the drain region formed in an oxide semiconductor film, hydrogen contained in the channel region of an oxide semiconductor film can be captured in the microvoid. |
申请公布号 |
US2012235137(A1) |
申请公布日期 |
2012.09.20 |
申请号 |
US201213415080 |
申请日期 |
2012.03.08 |
申请人 |
KOEZUKA JUNICHI;SATO YUICHI;OHNO SHINJI;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
KOEZUKA JUNICHI;SATO YUICHI;OHNO SHINJI |
分类号 |
H01L29/78;H01L21/44;H01L29/22 |
主分类号 |
H01L29/78 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|